Chamber undercoat preparation method for low temperature ALD films
US9745658B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 25, 2013 |
| Grant date | Aug 29, 2017 |
| Priority date | — |
| Expiry date | Sep 21, 2034 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4404
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods and apparatus disclosed herein relate to the formation and use of undercoats on the interior surfaces of reaction chambers used to deposit films on substrates. The undercoats are deposited through atomic layer deposition methods. For example, the undercoat may be formed by flowing a first reactant into the reaction chamber, flowing a second reactant into the reaction chamber while the first reactant is adsorbed on interior surfaces of the reaction chamber, and exposing the reaction chamber to plasma to form the undercoat. The disclosed undercoats help prevent metal contamination, provide improved resistance to flaking, and are relatively thin. Because of the superior resistance to flaking, the disclosed undercoats allow more substrates to be processed between subsequent cleaning operations, thereby increasing throughput.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.