Tungsten deposition with tungsten hexafluoride (WF6) etchback
US9748105B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 22, 2014 |
| Grant date | Aug 29, 2017 |
| Priority date | — |
| Expiry date | Jul 22, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32136
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Implementations described herein generally relate to methods for forming tungsten materials on substrates using vapor deposition processes. The method comprises positioning a substrate having a feature formed therein in a substrate processing chamber, depositing a first film of a bulk tungsten layer by introducing a continuous flow of a hydrogen containing gas and a tungsten halide compound to the processing chamber to deposit the first tungsten film over the feature, etching the first film of the bulk tungsten layer using a plasma treatment to remove a portion of the first film by exposing the first film to a continuous flow of the tungsten halide compound and an activated treatment gas and depositing a second film of the bulk tungsten layer by introducing a continuous flow of the hydrogen containing gas and the tungsten halide compound to the processing chamber to deposit the second tungsten film over the first tungsten film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.