Semiconductor device and method of forming the same
US9748256B2 · kind B2 · utility
1Cited by
3References
4Claims
0Family size
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Key dates
| Filing date | Oct 27, 2015 |
| Grant date | Aug 29, 2017 |
| Priority date | — |
| Expiry date | Oct 27, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
Abstract
Provided is a semiconductor device including a memory gate structure and a select gate structure. The memory gate structure is closely adjacent to the select gate structure. Besides, an air gap encapsulated by an insulating layer is disposed between the memory gate structure and the select gate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.