Etching oxide-nitride stacks using C4F6H2
US9748366B2 · kind B2 · utility
2Cited by
7References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 19, 2014 |
| Grant date | Aug 29, 2017 |
| Priority date | — |
| Expiry date | Apr 22, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An article having alternating oxide layers and nitride layers is etched by an etch process. The etch process includes providing a first gas comprising C4F6H2 in a chamber of an etch reactor, ionizing the C4F6H2 containing gas to produce a plasma comprising a plurality of ions, and etching the article using the plurality of ions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.