Patent · US Active

Semiconductor device having a field-effect structure and a nitrogen concentration profile

US9748374B2 · kind B2 · utility

0Cited by

4References

13Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Hans-Joachim Schulze · Taufkirchen, DE
Peter Irsigler · Ried im Innkreis, AT

Key dates

Filing date	Apr 6, 2015
Grant date	Aug 29, 2017
Priority date	—
Expiry date	Apr 6, 2035

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S438/974
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a silicon semiconductor body having a main surface and a nitrogen concentration which is lower than about 2*1014 cm−3 at least in a first portion of the silicon semiconductor body, the first portion extending from the main surface to a depth of about 50 μm. The nitrogen concentration increases with a distance from the main surface at least in the first portion. The semiconductor device further includes a field-effect structure arranged next to the main surface.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.