Method for fabricating a semiconductor device including gate-to-bulk substrate isolation
US9748404B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 29, 2016 |
| Grant date | Aug 29, 2017 |
| Priority date | — |
| Expiry date | Feb 29, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/121
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor device comprises forming a sacrificial layer of a first semiconductor material on a substrate, a layer of a second semiconductor material on the sacrificial layer, and a layer of a third semiconductor material on the layer of the second semiconductor material. Portions of the layer of the deposited material are removed to form a first nanowire arranged on the sacrificial fin and a second nanowire arranged on the first nanowire. An oxidizing process is performed that forms a first layer of oxide material on exposed portions of the second nanowire and a second layer of oxide material on exposed portions of the sacrificial fin, the first layer of oxide material having a first thickness and the second layer of oxide material having a second thickness, where the first thickness is less than the second thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.