Inventor · Guilderland, NY, US

Xin Miao

323Patents
16h-index
69Co-inventors
89Inventor score

Filing activity: Sep 18, 1998 → Sep 18, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US9362355B1 Nanosheet MOSFET with full-height air-gap spacer Electricity 145 Active
US9716158B1 Air gap spacer between contact and gate region Electricity 67 Active
US9741626B1 Vertical transistor with uniform bottom spacer formed by selective oxidation Electricity 42 Active
US9721897B1 Transistor with air spacer and self-aligned contact Electricity 38 Active
US9899515B1 Fabrication of a pair of vertical fin field effect transistors having a merged top source/drain Electricity 34 Active
US9859166B1 Vertical field effect transistor having U-shaped top spacer Electricity 34 Active
US9647139B2 Atomic layer deposition sealing integration for nanosheet complementary metal oxide semiconductor with replacement spacer Electricity 28 Active
US9853028B1 Vertical FET with reduced parasitic capacitance Electricity 28 Active
US9761728B1 Self-aligned source/drain junction for vertical field-effect transistor (FET) and method of forming the same Electricity 28 Active
US9799749B1 Vertical transport FET devices with uniform bottom spacer Electricity 27 Active
US9859409B2 Single-electron transistor with wrap-around gate Electricity 27 Active
US9515138B1 Structure and method to minimize junction capacitance in nano sheets Electricity 24 Active
US10229971B1 Integration of thick and thin nanosheet transistors on a single chip Electricity 23 Active
US9466570B1 MOSFET with asymmetric self-aligned contact Electricity 22 Active
US9748404B1 Method for fabricating a semiconductor device including gate-to-bulk substrate isolation Electricity 22 Active
US9508829B1 Nanosheet MOSFET with full-height air-gap spacer Electricity 18 Active
US9607899B1 Integration of vertical transistors with 3D long channel transistors Electricity 16 Active
US6633555B1 System and method for monitoring signaling units on A-interface links in a GSM network Electricity 15 Expired
US10141448B1 Vertical FETs with different gate lengths and spacer thicknesses Electricity 15 Active
US9653547B1 Integrated etch stop for capped gate and method for manufacturing the same Electricity 15 Active
US9437501B1 Stacked nanowire device width adjustment by gas cluster ion beam (GCIB) Electricity 14 Active
US9853132B2 Nanosheet MOSFET with full-height air-gap spacer Electricity 14 Active
US9741717B1 FinFETs with controllable and adjustable channel doping Electricity 14 Active
US10083871B2 Fabrication of a vertical transistor with self-aligned bottom source/drain Electricity 13 Active
US9799655B1 Flipped vertical field-effect-transistor Electricity 13 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.