Patent · US Active

Memory cells including vertically oriented adjustable resistance structures

US9748479B2 · kind B2 · utility

0Cited by

1References

20Claims

0Family size

Assignee

Sandisk Technologies, Inc. · US

Inventors

Juan Saenz · Menlo Park, US
Christopher J. Petti · Mountain View, US

Key dates

Filing date	Jan 31, 2017
Grant date	Aug 29, 2017
Priority date	—
Expiry date	Jan 31, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH10N70/883
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A memory cell is provided that includes a vertically-oriented adjustable resistance material layer, a control terminal disposed adjacent the vertically-oriented adjustable resistance material layer and coupled to a word line, and a reversible resistance-switching element disposed on the vertically-oriented adjustable resistance material layer. The control terminal is configured to adjust a resistance of the vertically-oriented adjustable resistance material layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.