Patent · US Active

Semiconductor device with integrated mirror and method of producing a semiconductor device with integrated mirror

US9753218B2 · kind B2 · utility

3Cited by

4References

13Claims

0Family size

Assignee

AMS AG · AT

Inventors

Jochen Kraft · Bruck an der Mur, AT
Joerg Siegert · Graz, AT
Ewald Stueckler · Graz, AT

Key dates

Filing date	Nov 17, 2014
Grant date	Sep 5, 2017
Priority date	—
Expiry date	Nov 17, 2034

Classification

Technology area (CPC G)Physics
CPC primaryG02B2006/12104
WIPO fieldOptics
WIPO sectorInstruments

Abstract

The semiconductor device comprises a substrate (1) of semiconductor material, a dielectric layer (2) above the substrate, a waveguide (3) arranged in the dielectric layer, and a mirror region (4) arranged on a surface of a mirror support (5) integrated on the substrate. A mirror is thus formed facing the waveguide. The surface of the mirror support and hence the mirror are inclined with respect to the waveguide.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.