Vacancy-modulated conductive oxide resistive RAM device including an interfacial oxygen source layer
US9754665B2 · kind B2 · utility
14Cited by
6References
18Claims
0Family size
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Key dates
| Filing date | Aug 4, 2016 |
| Grant date | Sep 5, 2017 |
| Priority date | — |
| Expiry date | Aug 4, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/71
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A vacancy-modulated conductive oxide (VMCO) resistive random access memory (ReRAM) device includes at least one interfacial layer between a semiconductor portion and a titanium oxide portion of a resistive memory element. The at least one interfacial layer includes an oxygen reservoir that can store oxygen atoms during operation of the resistive memory element. The at least one interfacial layer can include an interfacial metal oxide layer, a metal layer, and optionally, a ruthenium layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.