Method of initializing and driving 3D non-volatile memory device using time varying erase signal
US9754673B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 2, 2016 |
| Grant date | Sep 5, 2017 |
| Priority date | — |
| Expiry date | Nov 2, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/12
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of controlling a 3D non-volatile memory device includes initially leveling threshold voltages of the string selection transistors disposed in one or more of the plurality of memory layers to have a predetermined target level; applying a first time varying erase voltage signal having a first time varying section to a first plurality of channel lines of a first memory layer selected among the plurality of memory layers comprising the initially leveled string selection transistors; and setting threshold voltages of the initially leveled string selection transistors in the first memory layer by controlling each of the plurality of string selection lines respectively coupled with the initially leveled string selection transistors during the first time varying section of the first time varying erase voltage signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.