Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system
US9754786B2 · kind B2 · utility
2Cited by
77References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 21, 2015 |
| Grant date | Sep 5, 2017 |
| Priority date | — |
| Expiry date | Apr 21, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/13
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion implantation system and process, in which the performance and lifetime of the ion source of the ion implantation system are enhanced, by utilizing isotopically enriched dopant materials, or by utilizing dopant materials with supplemental gas(es) effective to provide such enhancement.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.