Hybridization fin reveal for uniform fin reveal depth across different fin pitches

US9754798B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Zhenxing Bi · Dunn Loring, US
• Donald F. Canaperi · Bridgewater, US
• Thamarai S. Devarajan · Niskayuna, US
• Sivananda K. Kanakasabapathy · Niskayuna, US
• Fee Li Lie · Albany, US
• Peng Xu · Guilderland, US

Key dates

• Filing date: Sep 28, 2016
• Grant date: Sep 5, 2017
• Expiry date: Sep 28, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/0158
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for uniform fin reveal depth for semiconductor devices includes dry etching a dielectric material to reveal semiconductor fins by a quasi-atomic layer etching (quasi-ALE) process to achieve depth uniformity across different fin pitches. A lateral bias induced by the quasi-ALE process is compensated for by isotropically etching the dielectric material.