Conductive interconnect structures incorporating negative thermal expansion materials and associated systems, devices, and methods
US9754825B2 · kind B2 · utility
3Cited by
1References
19Claims
0Family size
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Key dates
| Filing date | Jul 31, 2015 |
| Grant date | Sep 5, 2017 |
| Priority date | — |
| Expiry date | Jul 31, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices having interconnects incorporating negative expansion (NTE) materials are disclosed herein. In one embodiment a semiconductor device includes a substrate having an opening that extends at least partially through the substrate. A conductive material having a positive coefficient of thermal expansion (CTE) partially fills the opening. A negative thermal expansion (NTE) having a negative CTE also partially fills the opening. In one embodiment, the conductive material includes copper and the NTE material includes zirconium tungstate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.