Hybrid metal interconnects with a bamboo grain microstructure
US9754883B1 · kind B1 · utility
10Cited by
8References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 4, 2016 |
| Grant date | Sep 5, 2017 |
| Priority date | — |
| Expiry date | Mar 4, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76849
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming an interconnect with a bamboo grain microstructure. The method includes forming a conductive filler layer in a trench of an insulating layer to a predetermined depth such that an aspect ratio of a top portion of the trench is reduced to a threshold level, depositing a metal layer over the conductive filler layer in the top portion of the trench, the metal layer having a plurality of small grains, and annealing the metal layer to provide a bamboo grain microstructure having larger grains than grain boundaries of the plurality of small grains.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.