Patent · US Active

Stacked semiconductor package and manufacturing method thereof

US9754892B2 · kind B2 · utility

3Cited by
6References
17Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 28, 2012
Grant dateSep 5, 2017
Priority date
Expiry dateJan 31, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/18162
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Disclosed herein is a stacked semiconductor package in which semiconductor chips having various sizes are stacked. In accordance with one aspect of the present disclosure, a stacked semiconductor package includes a first semiconductor chip structure provided with a first semiconductor chip, a first mold layer surrounding the first semiconductor chip, and a first penetration electrode passing through the first mold layer and electrically connected to the first semiconductor chip, and a second semiconductor chip structure vertically stacked on the first semiconductor chip structure and provided with a second semiconductor chip and a second penetration electrode electrically connected to the first penetration electrode, wherein the first semiconductor chip structure may have the same size as the second semiconductor chip structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.