Processing method of optical device wafer
US9761492B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 12, 2016 |
| Grant date | Sep 12, 2017 |
| Priority date | — |
| Expiry date | Oct 12, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/036
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A processing method for optical device wafers includes a shielded tunnel forming step and a dividing step. In the shielded tunnel forming step, a sapphire substrate is irradiated with a pulse laser beam having such a wavelength as to be transmitted through the sapphire substrate along regions corresponding to planned dividing lines. The light focus point of the beam is positioned inside the substrate from the back surface side of the substrate. Fine pores and amorphous regions that shield the fine pores form shielded tunnels along the planned dividing lines. In the dividing step, an external force is applied to the optical device wafer, and the optical device wafer is divided into individual optical device chips along the planned dividing lines. In the shielded tunnel forming step, a spherical aberration is generated by causing the laser beam to be incident on a condensing lens with a divergence angle.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.