Patent · US Active

Bond pad structure

US9761548B1 · kind B1 · utility

2Cited by

8References

16Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Peter Irsigler · Ried im Innkreis, AT
Martina Seider-Schmidt · Munich, DE
Sebastian Schmidt · Weisendorf, DE
Oliver Hellmund · Straubing, DE

Key dates

Filing date	May 19, 2016
Grant date	Sep 12, 2017
Priority date	—
Expiry date	May 19, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/351
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A bond pad structure includes a first oxide layer that overlies a substrate. A plurality of adhesion structures are formed over the first oxide layer. A second oxide layer is formed over the plurality of adhesion structures and the first oxide layer. Each one of a plurality of contact openings formed within a surface region of the second oxide layer includes one or more sides and is aligned over at least a portion of a top surface of a corresponding one of the plurality of adhesion structures. A barrier layer is formed within the surface region that is over the second oxide layer and within the plurality of contact openings and over the at least a portion of the top surface of the corresponding ones of the plurality of adhesion structures. A metal layer is formed over the barrier layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.