Strained channel field effect transistor

US9761666B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Mark van Dal · Linden, BE
• Gerben Doornbos · Kessel-Lo, BE
• Georgios Vellianitis · Heverlee, BE
• Tsung-Lin Lee · Hsinchu, TW
• Feng Yuan · Sanwan, TW

Key dates

• Filing date: Jun 16, 2011
• Grant date: Sep 12, 2017
• Expiry date: Sep 15, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/822

Abstract

The present disclosure provides a semiconductor device with a strained SiGe channel and a method for fabricating such a device. In an embodiment, a semiconductor device includes a substrate including at least two isolation features, a fin substrate disposed between and above the at least two isolation features, and an epitaxial layer disposed over exposed portions of the fin substrate. According to one aspect, the epitaxial layer may be disposed over a top surface and sidewalls of the fin substrate. According to another aspect, the fin substrate may be disposed substantially completely above the at least two isolation features.