Method and structure for metal gates
US9761684B2 · kind B2 · utility
24Cited by
11References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 30, 2016 |
| Grant date | Sep 12, 2017 |
| Priority date | — |
| Expiry date | Aug 30, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/853
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having metal gates and methods of forming the same are disclosed. The semiconductor device includes a substrate and a gate structure over the substrate. The gate structure includes a gate dielectric layer over the substrate, a barrier layer over the gate dielectric layer, an oxide layer over the barrier layer, and a work function metal layer over the oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.