Semiconductor device and method for fabricating the same
US9761697B2 · kind B2 · utility
0Cited by
3References
6Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 29, 2016 |
| Grant date | Sep 12, 2017 |
| Priority date | — |
| Expiry date | Jun 29, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device comprises a substrate, a gate structure and a gate spacer. The substrate has a semiconductor fin protruding from a surface of the substrate. The gate structure is disposed on the semiconductor fin. The gate spacer is disposed on sidewalls of the gate structure, wherein the gate spacer comprises a first material layer and a second material layer stacked with each other and both of these two material layers are directly in contact with the gate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.