Ferroelectric memory cell apparatuses and methods of operating ferroelectric memory cells
US9767880B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 16, 2016 |
| Grant date | Sep 19, 2017 |
| Priority date | — |
| Expiry date | Mar 16, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/2293
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Methods, systems, and devices for operating a ferroelectric memory cell or cells are described. Prior to writing a logic value to a ferroelectric memory cell, a digit line of a ferroelectric memory cell may be biased to a first voltage, and a cell plate of the ferroelectric memory cell may be biased to a second voltage. A magnitude of a difference between the first voltage and the second voltage may be greater than a magnitude of a write voltage for the first ferroelectric memory cell. The magnitude of the difference between the first voltage and the second voltage may decrease the time to reach a write voltage for the ferroelectric memory cell. Several example cell plate drivers are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.