Method and system for modifying substrate relief features using ion implantation
US9767987B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 28, 2014 |
| Grant date | Sep 19, 2017 |
| Priority date | — |
| Expiry date | Feb 6, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/026
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of treating resist features comprises positioning, in a process chamber, a substrate having a set of patterned resist features on a first side of the substrate and generating a plasma in the process chamber having a plasma sheath adjacent to the first side of the substrate. The method may further comprise modifying a shape of a boundary between the plasma and the plasma sheath with a plasma sheath modifier so that a portion of the shape of the boundary is not parallel to a plane defined by a front surface of the substrate facing the plasma, wherein ions from the plasma impinge on the patterned resist features over a wide angular range during a first exposure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.