Formation of heteroepitaxial layers with rapid thermal processing to remove lattice dislocations
US9768016B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 25, 2014 |
| Grant date | Sep 19, 2017 |
| Priority date | — |
| Expiry date | Jun 25, 2034 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB23K2103/56
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Method and devices are disclosed for device manufacture of gallium nitride devices by growing a gallium nitride layer on a silicon substrate using Atomic Layer Deposition (ALD) followed by rapid thermal annealing. Gallium nitride is grown directly on silicon or on a barrier layer of aluminum nitride grown on the silicon substrate. One or both layers are thermally processed by rapid thermal annealing. Preferably the ALD process use a reaction temperature below 550° C. and preferable below 350° C. The rapid thermal annealing step raises the temperature of the coating surface to a temperature ranging from 550 to 1500° C. for less than 12 msec.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.