Patent · US Active

Pad structure layout for semiconductor device

US9768221B2 · kind B2 · utility

6Cited by
11References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 27, 2013
Grant dateSep 19, 2017
Priority date
Expiry dateJun 27, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/13091
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device including a light sensing region disposed on a substrate is provided that includes a bond structure having one or more patterned layers underlying the pad element. The pad element may be coupled to the light sensing region and may be formed in a first metal layer disposed on the substrate. A second metal layer of the device has a first bond region, a region of the second metal layer that underlies the pad element. This first bond region of the second metal layer includes a pattern of a plurality of conductive lines interposed by dielectric. A via connects the pad element and the second metal layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.