Semiconductor device having improved superjunction trench structure and method of manufacture

US9768247B1 · kind B1 · utility

Assignee

• SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC · US

Inventors

• Samir Mouhoubi · Oudenaarde, BE
• Joris Baele · Evergem, BE

Key dates

• Filing date: May 6, 2016
• Grant date: Sep 19, 2017
• Expiry date: May 6, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/127

Abstract

A semiconductor device includes a charge-compensating region with a first structure disposed adjoining an end portion of the charge-compensating region. The first structure is configured to reduce charge-imbalances present in the charge-compensating region. In one embodiment, the first structure includes a trench that extends along the vertical depth of the charge-compensated trench so that the final charge-compensating region is provided without corner portions. In one embodiment, a material, such as a dielectric material and/or a polycrystalline semiconductor material, may be disposed within the trench and at least along the end portion of the charge-compensating region. Among other things, the first structure improves device electrical performance and manufacturing yields.