Bipolar semiconductor device having a charge-balanced inter-trench structure

US9768284B2 · kind B2 · utility

Assignee

• Infineon Technologies Americas Corp. · US

Inventors

• Florin Udrea · Cambridge, GB
• Alice Pei-Shan Hsieh · Cambridge, GB
• Gianluca Camuso · Cambridge, GB
• Chiu Ng · El Segundo, US
• Yi Tang · Torrance, US
• Rajeev Krishna Vytla · Los Angeles, US

Key dates

• Filing date: Dec 31, 2015
• Grant date: Sep 19, 2017
• Expiry date: Dec 31, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/231

Abstract

There are disclosed herein various implementations of a bipolar semiconductor device having a charge-balanced inter-trench structure. Such a device includes a drift region having a first conductivity type situated over an anode layer having a second conductivity type. The device also includes first and second control trenches extending through an inversion region having the second conductivity type into the drift region, each of the first and second control trenches being bordered by a cathode diffusion having the first conductivity type. In addition, the device includes an inter-trench structure situated in the drift region between the first and second control trenches. The inter-trench structure includes one or more first conductivity regions having the first conductivity type and one or more second conductivity region having the second conductivity type, the one or more first conductivity regions and the one or more second conductivity regions configured to substantially charge-balance the inter-trench structure.