Method of producing a semiconductor body

US9768344B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Korbinian Perzlmaier · Regensburg, DE
• Heribert Zull · Regensburg, DE
• Franz Eberhard · Kilchberg, CH
• Thomas Nicolas Emmanuel Veit · Leipzig, DE
• Mathias Kämpf · Burglengenfeld, DE
• Jens Dennemarck · Regensburg, DE

Key dates

• Filing date: Apr 5, 2016
• Grant date: Sep 19, 2017
• Expiry date: Apr 6, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/0201
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of producing a semiconductor body includes providing a semiconductor wafer having at least two chip regions and at least one separating region arranged between the chip regions, wherein the semiconductor wafer includes a layer sequence, an outermost layer of which has at least within the separating region a transmissive layer transmissive to electromagnetic radiation, carrying out at least one of removing the transmissive layer within the separating region before starting a separation process with help of a laser, applying an absorbent layer within the separating region, wherein the absorbent layer remains in the separation region during a subsequent separation process with help of a laser, and increasing the absorption coefficient of the transmissive layer within the separating region, and subsequently separating the chip regions along the separating regions by a laser.