Dual discharge modes operation for remote plasma
US9773648B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 25, 2014 |
| Grant date | Sep 26, 2017 |
| Priority date | — |
| Expiry date | Jun 13, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32568
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present technology may include a method of processing a semiconductor substrate. The method may include providing the semiconductor substrate in a processing region. Additionally, the method may include flowing gas through a cavity defined by a powered electrode. The method may further include applying a negative voltage to the powered electrode. Also, the method may include striking a hollow cathode discharge in the cavity to form hollow cathode discharge effluents from the gas. The hollow cathode discharge effluents may then be flowed to the processing region through a plurality of apertures defined by electrically grounded electrode. The method may then include reacting the hollow cathode discharge effluents with the semiconductor substrate in the processing region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.