High-purity copper sputtering target
US9773651B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 25, 2012 |
| Grant date | Sep 26, 2017 |
| Priority date | — |
| Expiry date | Oct 16, 2033 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/3414
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A high-purity copper sputtering target, wherein a Vickers hardness of a flange part of the target is in a range of 90 to 100 Hv, a Vickers hardness of an erosion part in the central area of the target is in a range of 55 to 70 Hv, and a crystal grain size of the erosion part is 80 μm or less. This invention relates to a high-purity copper sputtering target that does not need to be bonded to a backing plate (BP), and aims to provide a high-purity copper sputtering target capable of forming a thin film having superior uniformity by enhancing a strength (hardness) of the flange part of the target, and reducing an amount of warpage of the target. Moreover, the uniformity of the film thickness is improved by adjusting the (111) orientation ratio of the erosion part and the flange part in the target. The present invention thereby aims to provide a high-purity copper sputtering target, which is capable of improving the yield and reliability of semiconductor products that are being subject to further miniaturization and higher integration, and useful for forming a copper alloy wiring for semiconductors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.