Method of etching semiconductor structures with etch gas
US9773679B2 · kind B2 · utility
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5References
15Claims
0Family size
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Key dates
| Filing date | Sep 9, 2014 |
| Grant date | Sep 26, 2017 |
| Priority date | — |
| Expiry date | Sep 9, 2034 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C1/00404
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed are sulfur-containing compounds for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in Si-containing layers on a substrate and plasma etching methods of using the same. The plasma etching compounds may provide improved selectivity between the Si-containing layers and mask material, less damage to channel region, a straight vertical profile, and reduced bowing in pattern high aspect ratio structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.