Advanced method for scaled SRAM with flexible active pitch
US9773680B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 13, 2016 |
| Grant date | Sep 26, 2017 |
| Priority date | — |
| Expiry date | Dec 13, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Devices and methods of fabricating scaled SRAM with flexible active pitch are provided. One method includes, for instance: obtaining an intermediate semiconductor device having a first portion and a second portion, including a plurality of layers and a patterned mandrel; forming a first set of spacers surrounding the patterned mandrel; etching the dielectric layer; depositing a photoresist layer; opening the photoresist layer over the first portion and not the second portion, removing the patterned mandrel in the open areas; etching the dielectric layer in the open areas; removing the photoresist layer, the remaining patterned mandrels, and the first set of spacers in the first and second portion, etching the silicon layer and MTO layer to form a pattern; forming a second set of spacers around the pattern; and etching a set of fins into the substrate and oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.