Patent · US Active

Intermediate layer for copper structuring and methods of formation thereof

US9773736B2 · kind B2 · utility

0Cited by

3References

21Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Ravi Keshav Joshi · Klagenfurt, AT
Juergen Steinbrenner · Zistersdorf, AT
Christian Fachmann · Graz, AT
Petra Fischer · Wernberg, AT
Roman Roth · Sattendorf, AT

Key dates

Filing date	Jan 28, 2015
Grant date	Sep 26, 2017
Priority date	—
Expiry date	Jan 28, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of forming a metallization layer over a semiconductor substrate includes depositing a blanket layer of a diffusion barrier liner over an inter level dielectric layer, and depositing a blanket layer of an intermediate layer over the diffusion barrier liner. A blanket layer of a power metal layer including copper is deposited over the intermediate layer. The intermediate layer includes a solid solution of a majority element and copper. The intermediate layer has a different etch selectivity from the power metal layer. After depositing the power metal layer, structuring the power metal layer, the intermediate layer, and the diffusion barrier liner.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.