Conductive components and memory assemblies
US9773807B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 10, 2017 |
| Grant date | Sep 26, 2017 |
| Priority date | — |
| Expiry date | Mar 10, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/35
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Some embodiments include a memory assembly having memory cells proximate a conductive source. Channel material extends along the memory cells and is electrically coupled with the conductive source. The conductive source is over an insulative material and includes an adhesion material directly against the insulative material. The adhesion material comprises one or more of metal, silicon nitride, silicon oxynitride, silicon carbide, metal silicide, metal carbide, metal oxide, metal oxynitride and metal nitride. The conductive source includes metal-containing material over and directly against the adhesion material. The metal-containing material consists essentially of metal. The conductive source includes a metal-and-nitrogen-containing material over and directly against the metal-containing material, and includes a conductively-doped semiconductor material over the metal-and-nitrogen-containing material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.