Capacitor and method for fabricating the same
US9773860B1 · kind B1 · utility
0Cited by
5References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 7, 2016 |
| Grant date | Sep 26, 2017 |
| Priority date | — |
| Expiry date | Sep 7, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/692
Abstract
A method for fabricating a capacitor is disclosed. First, a substrate is provided, a bottom electrode and a capacitor dielectric layer are formed on the substrate, a conductive layer is formed on the capacitor dielectric layer, a patterned hard mask is formed on the conductive layer, a patterned hard mask is used to remove part of the conductive layer to form a top electrode, the patterned hard mask is removed, and a protective layer is formed on a top surface and sidewalls of top electrode. Preferably, the protective layer includes metal oxides.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.