VDMOS having a non-depletable extension zone formed between an active area and side surface of semiconductor body

US9773863B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Franz Hirler · Isen, DE
• Stefan Gamerith · Villach, AT
• Joachim Weyers · Grevesmühlen, DE
• Wolfgang Jantscher · Villach, AT
• Waqas Mumtaz Syed · Villach, AT

Key dates

• Filing date: May 14, 2014
• Grant date: Sep 26, 2017
• Expiry date: Jul 13, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/111
• WIPO field: Basic communication processes
• WIPO sector: Electrical engineering

Abstract

A semiconductor device includes a semiconductor body with transistor cells arranged in an active area and absent in an edge area between the active area and a side surface. A field dielectric adjoins a first surface of the semiconductor body and separates, in the edge area, a conductive structure connected to gate electrodes of the transistor cells from the semiconductor body. The field dielectric includes a transition from a first vertical extension to a second, greater vertical extension. The transition is in the vertical projection of a non-depletable extension zone in the semiconductor body, wherein the non-depletable extension zone has a conductivity type of body/anode zones of the transistor cells and is electrically connected to at least one of the body/anode zones.