Method for manufacturing insulated gate type switching device having low-density body region and high-density body region
US9773883B2 · kind B2 · utility
2Cited by
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Key dates
| Filing date | Oct 6, 2014 |
| Grant date | Sep 26, 2017 |
| Priority date | — |
| Expiry date | Oct 6, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
Abstract
A method is provided for manufacturing an insulated gate type switching device. The method includes: implanting second conductivity type impurities into a surface of a semiconductor substrate so as to form a second region of a second conductivity type in the surface; forming a third region of the second conductivity type having a second conductivity type impurity density lower than the second region on the surface by epitaxial growth: and forming a trench gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.