Fin field effect transistor and fabricating method thereof
US9773911B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 5, 2016 |
| Grant date | Sep 26, 2017 |
| Priority date | — |
| Expiry date | Feb 5, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A FinFET including a substrate, a plurality of insulators and a gate stack is provided. The substrate includes a plurality of trenches and at least one semiconductor fin between the trenches. The insulators are disposed in the trenches. The semiconductor fin includes a first portion embedded between the insulators; a necking portion disposed on the first portion, the necking portion being uncovered by the insulators; and a second portion disposed on the necking portion, wherein a width of the necking portion is less than a width of the first portion. The gate stack partially covers the semiconductor fin, the at least one recess and the insulators.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.