ALD systems and methods
US9777371B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2010 |
| Grant date | Oct 3, 2017 |
| Priority date | — |
| Expiry date | Dec 9, 2032 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45582
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A gas deposition system (1000) configured as a dual-chamber “tower” includes a frame (1140) for supporting two reaction chamber assemblies (3000), one vertically above the other. Each chamber assembly (3000) includes an outer wall assembly surrounding a hollow chamber (3070) sized to receive a single generation 4.5 (GEN 4.5) glass plate substrate through a load port. The substrate is disposed horizontally inside the hollow chamber (3070) and the chamber assembly (3000) includes removable and cleanable triangular shaped input (3150) and output (3250) plenums disposed external to the hollow chamber (3070) and configured to produce substantially horizontally directed laminar gas flow over a top surface of the substrate. Each chamber includes a cleanable and removable chamber liner assembly (6000) disposed inside the hollow chamber (3070) to contain precursor gases therein thereby preventing contamination of chamber outer walls (3010, 3020, 3030, 3040).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.