Non-volatile memory device
US9779797B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 24, 2016 |
| Grant date | Oct 3, 2017 |
| Priority date | — |
| Expiry date | Aug 24, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile memory device according to an embodiment includes a first conductive layer, a second conductive layer including metal nitride, the metal nitride absorbing oxygen, a paraelectric layer disposed between the first conductive layer and the second conductive layer, a ferroelectric layer disposed between the paraelectric layer and the second conductive layer, the ferroelectric layer including hafnium oxide, at least one third conductive layer disposed on opposite side of at least one of the first conductive layer and the second conductive layer to the ferroelectric layer, the at least one third conductive layer including metal oxide, the metal oxide having oxygen ratio larger than stoichiometric ratio, and a sense circuit configured to read data based on tunneling current flow between the first conductive layer and the second conductive layer through the paraelectric layer and the ferroelectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.