Patent · US Active

Method of manufacturing semiconductor wafers and method of manufacturing a semiconductor device

US9779931B2 · kind B2 · utility

1Cited by

2References

23Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Johannes Freund · Dietenhofen, DE
Helmut Oefner · Zorneding, DE
Hans-Joachim Schulze · Taufkirchen, DE

Key dates

Filing date	Oct 8, 2015
Grant date	Oct 3, 2017
Priority date	—
Expiry date	Oct 8, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2223/54493
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An embodiment of a method of manufacturing semiconductor wafers comprises determining at least one material characteristic for at least two positions of a semiconductor ingot. A notch or a flat is formed in a semiconductor ingot extending along an axial direction. A plurality of markings is formed in the semiconductor ingot. At least some of the plurality of markings at different positions along the axial direction are distinguishable from each other by a characteristic feature set depending on the at least one material characteristic. The semiconductor ingot is then sliced into semiconductor wafers.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.