Method and apparatus for irradiating a semiconductor material surface by laser energy
US9779945B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 21, 2011 |
| Grant date | Oct 3, 2017 |
| Priority date | — |
| Expiry date | Oct 25, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/268
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
An apparatus for irradiating semiconductor material is disclosed having, a laser generating a primary laser beam, an optical system and a means for shaping the primary laser beam, comprising a plurality of apertures for shaping the primary laser beam into a plurality of secondary laser beams. Wherein the shape and/or size of the individual apertures corresponds to that of a common region of a semiconductor material layer to be irradiated. The optical system is adapted for superposing the secondary laser beams to irradiate said common region. Further, the use of such an apparatus in semiconductor device manufacturing is disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.