Electromagnetic dipole for plasma density tuning in a substrate processing chamber
US9779953B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 19, 2014 |
| Grant date | Oct 3, 2017 |
| Priority date | — |
| Expiry date | Mar 24, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32669
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods and apparatus for plasma-enhanced substrate processing are provided herein. In some embodiments, an apparatus for processing a substrate includes: a process chamber having an internal processing volume disposed beneath a dielectric lid of the process chamber; a substrate support disposed in the process chamber; two or more concentric inductive coils disposed above the dielectric lid to inductively couple RF energy into the processing volume above the substrate support; and an electromagnetic dipole disposed proximate a top surface of the dielectric lid between two adjacent concentric inductive coils of the two or more concentric inductive coils.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.