Samer Banna
50Patents
6h-index
52Co-inventors
71Inventor score
Filing activity: Jul 30, 2008 → Feb 1, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8937800B2 | Electrostatic chuck with advanced RF and temperature uniformity | Electricity | 289 | Active |
| US8368308B2 | Inductively coupled plasma reactor having RF phase control and methods of use thereof | Electricity | 270 | Active |
| US8988848B2 | Extended and independent RF powered cathode substrate for extreme edge tunability | Emerging Cross-Sectional Technologies | 41 | Active |
| US8933628B2 | Inductively coupled plasma source with phase control | Electricity | 35 | Active |
| US8974684B2 | Synchronous embedded radio frequency pulsing for plasma etching | Electricity | 12 | Active |
| US10163606B2 | Plasma reactor with highly symmetrical four-fold gas injection | Electricity | 10 | Active |
| US10705514B2 | Adaptive chamber matching in advanced semiconductor process control | Emerging Cross-Sectional Technologies | 6 | Active |
| US8578879B2 | Apparatus for VHF impedance match tuning | Electricity | 5 | Active |
| US10008368B2 | Multi-zone gas injection assembly with azimuthal and radial distribution control | Electricity | 5 | Active |
| US9536710B2 | Tunable gas delivery assembly with internal diffuser and angular injection | Electricity | 4 | Active |
| US9779953B2 | Electromagnetic dipole for plasma density tuning in a substrate processing chamber | Electricity | 4 | Active |
| US10929586B2 | Predictive spatial digital design of experiment for advanced semiconductor process optimization and control | Physics | 4 | Active |
| US8299391B2 | Field enhanced inductively coupled plasma (Fe-ICP) reactor | Electricity | 3 | Active |
| US10332772B2 | Multi-zone heated ESC with independent edge zones | Emerging Cross-Sectional Technologies | 3 | Active |
| US9646893B2 | Method and apparatus for reducing radiation induced change in semiconductor structures | Electricity | 3 | Active |
| US8360003B2 | Plasma reactor with uniform process rate distribution by improved RF ground return path | Electricity | 3 | Active |
| US9257265B2 | Methods for reducing etch nonuniformity in the presence of a weak magnetic field in an inductively coupled plasma reactor | Electricity | 2 | Active |
| US8956886B2 | Embedded test structure for trimming process control | Electricity | 2 | Active |
| US10657214B2 | Predictive spatial digital design of experiment for advanced semiconductor process optimization and control | Physics | 2 | Active |
| US10955832B2 | Adaptive chamber matching in advanced semiconductor process control | Emerging Cross-Sectional Technologies | 2 | Active |
| US11244811B2 | Plasma reactor with highly symmetrical four-fold gas injection | Electricity | 1 | Active |
| US10573493B2 | Inductively coupled plasma apparatus | Electricity | 1 | Active |
| US8492980B2 | Methods for calibrating RF power applied to a plurality of RF coils in a plasma processing system | Electricity | 1 | Active |
| US9472378B2 | Multiple zone coil antenna with plural radial lobes | Electricity | 1 | Active |
| US11139150B2 | Nozzle for multi-zone gas injection assembly | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.