LCR test circuit structure for detecting metal gate defect conditions
US9780007B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 4, 2012 |
| Grant date | Oct 3, 2017 |
| Priority date | — |
| Expiry date | Aug 5, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A test structure for an integrated circuit device includes a series inductor, capacitor, resistor (LCR) circuit having one or more inductor elements, with each inductor element having at least one unit comprising a first segment formed in a first metal layer, a second segment connecting the first metal layer to a semiconductor substrate beneath the first metal layer, and a third segment formed in the semiconductor substrate; and a capacitor element connected in series with each inductor element, the capacitor element defined by a transistor gate structure including a gate electrode as a first electrode, a gate dielectric layer, and the semiconductor substrate as a second electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.