Gallium arsenide based materials used in thin film transistor applications
US9780223B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 14, 2016 |
| Grant date | Oct 3, 2017 |
| Priority date | — |
| Expiry date | Jul 14, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the invention provide a method of forming a group III-V material utilized in thin film transistor devices. In one embodiment, a gallium arsenide based (GaAs) layer with or without dopants formed from a solution based precursor may be utilized in thin film transistor devices. The gallium arsenide based (GaAs) layer formed from the solution based precursor may be incorporated in thin film transistor devices to improve device performance and device speed. In one embodiment, a thin film transistor structure includes a gate insulator layer disposed on a substrate, a GaAs based layer disposed over the gate insulator layer, and a source-drain metal electrode layer disposed adjacent to the GaAs based layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.