Integrated circuits with flash memory and methods for producing the same

US9780231B1 · kind B1 · utility

Assignee

• GlobalFoundries Singapore Pte. Ltd. · SG

Inventors

• Pinghui Li · Singapore, SG
• Ming Zhu · Singapore, SG
• Danny Pak-Chum Shum · Poughkeepsie, US
• Xinshu Cai · Singapore, SG
• Darin A. Chan · Campbell, US

Key dates

• Filing date: Sep 21, 2016
• Grant date: Oct 3, 2017
• Expiry date: Sep 21, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/151

Abstract

Integrated circuits and methods of producing such integrated circuits are provided. In an exemplary embodiment, an integrated circuit includes a substrate with an active layer overlying a handle layer. A partial buried insulator overlies the handle layer and underlies the active layer, terminates at a buried insulator termination point, and includes an electrically insulating material. A substrate extension is adjacent to the partial buried insulator, where the substrate extension overlies the handle layer and underlies the active layer, and where the substrate extension directly contacts the partial buried insulator at the buried insulator termination point. The substrate extension includes a semiconductive material. A memory gate overlies the active layer.