Magnetic memory element with composite perpendicular enhancement layer
US9780300B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 30, 2016 |
| Grant date | Oct 3, 2017 |
| Priority date | — |
| Expiry date | Nov 30, 2036 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y40/00
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention is directed to an MTJ memory element comprising a magnetic free layer structure including one or more magnetic free layers that have a variable magnetization direction substantially perpendicular to layer planes thereof; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a magnetic reference layer structure including a first magnetic reference layer and a second magnetic reference layer with a perpendicular enhancement layer interposed therebetween, the first and second magnetic reference layers having a first fixed magnetization direction substantially perpendicular to layer planes thereof; an anti-ferromagnetic coupling layer formed adjacent to the second magnetic reference layer; and a magnetic fixed layer formed adjacent to the anti-ferromagnetic coupling layer. The non-magnetic perpendicular enhancement layer includes a first perpendicular enhancement sublayer formed adjacent to the first magnetic reference layer and a second perpendicular enhancement sublayer formed adjacent to the second magnetic reference layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.