Compensation for threshold voltage variation of memory cell components
US9786345B1 · kind B1 · utility
15Cited by
17References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 16, 2016 |
| Grant date | Oct 10, 2017 |
| Priority date | — |
| Expiry date | Sep 16, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/2273
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Methods, systems, and devices for operating a ferroelectric memory cell or cells are described. Before reading a memory cell, the voltage on an access line of the memory cell may be initialized to a value associated with the threshold voltage of a switching component in electronic communication with the memory cell. The voltage may be initialized by reducing the existing voltage on the access line to the value. The switching component or an additional pull down device, or both, may be used to reduce the voltage of the access line. After the access line has been initialized to the value, the read operation may be triggered.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.