Patent · US Active

Method for the production of a nitride compound semiconductor layer

US9786498B2 · kind B2 · utility

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8Claims

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Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Juergen Off · Regensburg, DE
Matthias Peter · Orpund, CH
Thomas Lehnhardt · Regensburg, DE
Werner Bergbauer · Windberg, DE

Key dates

Filing date	Feb 12, 2015
Grant date	Oct 10, 2017
Priority date	—
Expiry date	Feb 12, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/02658
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Described is a method for producing a nitride compound semiconductor layer, involving the steps of:—depositing a first seed layer (1) comprising a nitride compound semiconductor material on a substrate (10);—desorbing at least some of the nitride compound semiconductor material in the first seed layer from the substrate (10);—depositing a second seed layer (2) comprising a nitride compound semiconductor material; and—growing the nitride compound semiconductor layer (3) containing a nitride compound semiconductor material onto the second seed layer (2).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.